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. 2017 Feb 14;29(3):921-925.
doi: 10.1021/acs.chemmater.6b04469. Epub 2017 Jan 23.

Area-Selective Atomic Layer Deposition of In2O3:H Using a μ-Plasma Printer for Local Area Activation

Alfredo Mameli  1 , Yinghuan Kuang  1 , Morteza Aghaee  1 , Chaitanya K Ande  1 , Bora Karasulu  1 , Mariadriana Creatore  1 , Adriaan J M Mackus  1 , Wilhelmus M M Kessels  1 , Fred Roozeboom  2
Affiliations

Area-Selective Atomic Layer Deposition of In2O3:H Using a μ-Plasma Printer for Local Area Activation

Alfredo Mameli et al. Chem Mater. .
No abstract available

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Conflict of interest statement

The authors declare no competing financial interest.

Figures

Figure 1
Figure 1
Schematic representation of the area-selective ALD process of In2O3:H on H-terminated silicon materials. In the first step (1), microscale patterns are defined by activating the surface with a μ-plasma operated in air or O2. In the second step (2), the In2O3:H is deposited selectively on the activated areas in a building step. The ALD process consists of two alternating half reactions: InCp precursor dosing in pulse A and a mixture of O2 and H2O dosing in pulse B. Note that in the case that conductive substrates are used, a thin dielectric membrane (Al2O3) is positioned between the needles and the substrate, as shown in Figure S1a.
Figure 2
Figure 2
(a) Photograph of a 4-in. Si(100) wafer covered with 10 nm of a-Si:H with the letters “TU/e” prepared using the direct-write ALD process of In2O3:H. The number of ALD cycles was 400 and the thickness of the In2O3:H was ∼35 nm. (b) XPS signals for the In 3d5/2 and In 3d3/2 binding energy measured for two distinctive points inside (black) and outside (red) the patterned area.
Figure 3
Figure 3
(a) Photograph of In2O3:H lines being 3.0 and 0.8 mm wide as prepared by the direct-write ALD process with 400 cycles. XPS line scans for the patterns depicted in (a) showing the atomic percentages related to (b) In2O3 (In 3d5/2 and O 1s) and (c) the Si substrate (Si 2p).
Figure 4
Figure 4
Film thickness measured by in situ SE as a function of the In2O3:H ALD cycles on SiO2 (open triangles) and on a-Si:H (open circles). Ex situ SE measurements were taken only for 600 and 780 ALD cycles on a-Si:H. Above 600 ALD cycles the selectivity of the process appears to degrade.
Figure 5
Figure 5
Energy profiles computed by DFT method (PBE-D3) for the chemisorption of InCp on (a) hydrogenated silicon (Si–H termination) and (b) on hydroxylated silicon oxide (Si–OH termination).
Figure 6
Figure 6
Pattern prepared by direct-write ALD of a 35 nm thick In2O3:H film on a flexible stainless steel foil covered with 20 nm of a-Si:H. This serves as a first demonstrator of the capability of the direct-write ALD process for large-area and flexible electronics.
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