Single crystals of the group IVa to VIII transition‐metal disilicides, namely TiSi2, VSi2, CrSi2, MoSi2, αFeSi2, and CoSi2, have been successfully grown by a floating‐zone method. Temperature and crystallographic dependencies of the resistivity have been measured in the temperature range from 4.2 K to room temperature. The resistivity of all the disilicides show a positive temperature dependence and some anisotropy. The thermal component of the resistivity changes systematically with the group number of the metal elements and correlates well with the d band density of states at the Fermi energy.
REFERENCES
1.
See S. P. Murarka, Silicides for VLSI Applications (Academic, New York, 1983).
2.
D.
Shinoda
, S.
Asanabe
, and Y.
Sasaki
, J. Phys. Soc. Jpn.
19
, 269
(1964
).3.
4.
U.
Birkholz
and J.
Naegele
, Phys. Status Solidi
39
, 197
(1970
)., Phys. Status Solidi
5.
6.
S.
Sivaram
, P. J.
Ficarola
, and K. C.
Cadien
, J. Appl. Phys.
58
, 1314
(1985
).7.
P. Villars and L. D. Calvert, Pearson’s Handbook of Crystallographic Data for Intermetallic Phases (American Society for Metals, Metals Park, OH, 1985).
8.
9.
O.
Thomas
, R.
Madar
, J. P.
Senateur
, and O.
Laborde
, J. Less‐Common Met.
136
, 175
(1987
).10.
F.
Nava
, E.
Mazzega
, M.
Michelini
, O.
Laborde
, O.
Thomas
, J. P.
Senateur
, and R.
Madar
, J. Appl. Phys.
65
, 1584
(1989
).11.
O.
Thomas
, J. P.
Senateur
, R.
Madar
, O.
Laborde
, and E.
Rosencher
, Solid State Commun.
55
, 692
(1985
).12.
O.
Laborde
, O.
Thomas
, J. P.
Senateur
, and R.
Madar
, J. Phys. F
16
, 1745
(1986
).13.
14.
A.
Briggs
, O.
Thomas
, R.
Madar
, and J. P.
Senateur
, Appl. Surf. Sci.
38
, 88
(1989
).15.
16.
T. B. Massalski, Ed., Binary Alloy Phase Diagrams (American Society for Metals, Metals Park, OH, 1986).
17.
Y.
Iye
, T.
Tamegai
, H.
Takeyama
, and H.
Takei
, Jpn. J. Appl. Phys.
27
, L658
(1988
).18.
P. H.
Woerlee
, P. M. Th.
van Attekum
, A. A. M.
Hoeben
, G. A. M.
Hurkx
, and R. A. M.
Wolters
, Appl. Phys. Lett.
44
, 876
(1984
).19.
J. W. C.
de Vries
and A. H.
van Ommen
, J. Appl. Phys.
64
, 749
(1988
).20.
S. P.
Murarka
, M. H.
Read
, C. J.
Doherty
, and D. B.
Fraser
, J. Electrochem. Soc.
129
, 293
(1982
).21.
V.
Malhotra
, T. L.
Martin
, and J. E.
Mahan
, J. Vac. Sci. Technol. B
2
, 10
(1984
).22.
E.
Bucher
, S.
Schulz
, M. Ch.
Lux‐Steiner
, P.
Munz
, U.
Gubler
, and F.
Greuter
, Appl. Phys. A
40
, 71
(1986
).23.
F.
Nava
, K. N.
Tu
, E.
Mazzega
, M.
Michelini
and G.
Queirolo
, J. Appl. Phys.
61
, 1085
(1987
).24.
25.
M. Nakamura, S. Matsumoto, and T. Hirano, J. Mater. Sci. (in press).
26.
Ch.
Krontiras
, I.
Suni
, F. M.
d’Heurle
, F. K.
LeGoues
, and R.
Joshi
, J. Phys. F
17
, 1953
(1987
).27.
28.
G. V. Samsonov and I. M. Vinittski, Handbook of Refractory Compounds (Metallurgiya, Moscow, 1976; IFZ/Plenum, New York, 1980).
29.
F. A.
Sidorenko
, P. V.
Geld
, V. Ya.
Elner
, and B. V.
Ryzhenko
, J. Phys. Chem. Solids
43
, 297
(1982
).30.
See, for example,
M. R.
Cimberle
, G.
Bobel
, and C.
Rizzuto
, Adv. Phys.
23
, 639
(1974
).31.
A. Kelly and G. W. Groves, Crystallography and Crystal Defects (Longman, London, 1970).
32.
A. G.
Balogh
, L.
Bottyan
, G.
Brauer
, I.
Dezi
, and B.
Molnar
, J. Phys. F
16
, 1725
(1986
).33.
See, for example,
K. C. R.
Chiu
, J. M.
Poate
, L. C.
Feldman
, and C. J.
Doherty
, Appl. Phys. Lett.
36
, 544
(1980
);S.
Saitoh
, H.
Ishiwara
, and S.
Furukawa
, Appl. Phys. Lett.
37
, 203
(1980
); , Appl. Phys. Lett.
J. C.
Bean
and J. M.
Poate
, Appl. Phys. Lett.
37
, 643
(1980
)., Appl. Phys. Lett.
34.
J. C.
Hensel
, R. T.
Tung
, J. M.
Poate
, and F. C.
Unterwald
, Appl. Phys. Lett.
44
, 913
(1984
).35.
N. F. Mott and H. Jones, The Theory of the Properties of Metals and Alloys (Dover, New York, 1958).
36.
37.
F. J.
Pinski
, P. B.
Allen
, and W. H.
Butler
, Phys. Rev.
23
, 5080
(1981
).38.
J. H.
Weaver
, A.
Franciosi
, and V. L.
Moruzzi
, Phys. Rev. B
29
, 3923
(1984
).39.
W.
Speier
, E. v.
Leuken
, J. C.
Fuggle
, D. D.
Sarma
, L.
Kumar
, B.
Danth
, and K. H. J.
Buschow
, Phys. Rev. B
39
, 6008
(1989
).
This content is only available via PDF.
© 1990 American Institute of Physics.
1990
American Institute of Physics
You do not currently have access to this content.
